For this photonic study, we first demonstrate through mechanical characterization of the interface that bona fide oxide-free bonding is obtained on such a nanopatterned waveguide. Next, for photonic purposes, we implement a uniquely designed sub-wavelength silicon waveguide patterning that provides in a single technological step advanced optical functions while keeping the Si guiding surface planar enough for maintaining the oxide-free bonding compatibility. As a negative consequence, any intense carrier flow produces a large Joule overheating, hampering high output power of, e.g., hybrid lasers through a large thermal roll-off. For integrated optoelectronic devices, this dielectric material layer unfortunately precludes electrical injection across the interface: carrier injection is then performed through the III-V-doped layers, and thus along the n-doped InP layer which is very thin. The intermediate bonding layer is usually a dielectric material (SiO 2, BCB), with a typical thickness in the 50–100 nm range or a very thin ~5–10 nm SiO 2 layer. ![]() ![]() This bonding approach has indeed produced sophisticated integrated devices, based on classical photonic integrated circuit schemes, taking advantage of the Si guiding layer to route optical signals as well. ![]() Hybrid bonding of III-V on Si has been intensively developed for integrated photonics on silicon, but mainly with the help of an intermediate layer that provides bonding at annealing temperatures in the 250–300 ☌ range compatible with CMOS processing.
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